Datasheet4U Logo Datasheet4U.com

SSC8124GS6B - N-Channel Enhancement Mode MOSFET

Description

on-state resistance.

Features

  • s VDS VGS RDSon TYP 22mR@4V5 ID.

📥 Download Datasheet

Datasheet Details

Part number SSC8124GS6B
Manufacturer AFSEMI
File Size 145.04 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8124GS6B Datasheet

📁 Similar Datasheet

  • SSC8033GS3 - P-Channel Enhancement Mode MOSFET (SPIRIT-SEMI)
  • SSC8035GS6 - P-Channel MOSFET (VBsemi)
  • SSC-AM101 - CHIP LED DEVICE (Seoul Semiconductor)
  • SSC-AWT722 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-CMX2 - Clip Addressable Output Module (Firesense)
  • SSC-D3232SL-88 - LED DOT MATRIX (Seoul Semiconductor)
  • SSC-ERT801 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-FAT801 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-FB102 - LED DEVICE (Seoul Semiconductor)
  • SSC-HB601 - LED DEVICE (Seoul Semiconductor)
Other Datasheets by AFSEMI

Full PDF Text Transcription

Click to expand full text
SSC8124GS6B N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 22mR@4V5 ID  Applications  Load Switch  Portable Devices  DCDC Conversion 20V ±12V 25mR@2V5 32mR@1V8 6A  Pin configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.  Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://www.afsemi.
Published: |