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SSC8120GS6 - N-Channel Enhancement Mode MOSFET

Description

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

Applications Load Sw

Features

  • s VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K.
  • General.

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Datasheet Details

Part number SSC8120GS6
Manufacturer AFSEMI
File Size 170.12 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8120GS6 Datasheet

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Full PDF Text Transcription

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SSC8120GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View  Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://www.afsemi.
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