NGW75T65H3DF 75A high speed trench field-stop IGBT

nexperia

Description

TO-247-3L NGW75T65H3DF 650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode Rev.1 * 28 June 2024 Product data she.
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

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Datasheet Specifications

Part number: NGW75T65H3DF
Manufacturer: nexperia ↗
File Size: 256.35 KB
Datasheet: NGW75T65H3DF-nexperia.pdf
Description: 75A high speed trench field-stop IGBT

Features

* Collector current (IC) rated at 75 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction temperature of 175 °C
* Fully rated as a soft fast reverse recovery diode
* RoHS compliant, lead-f

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