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NGW75T65H3DFP - 650V 75A trench field-stop IGBT

Description

The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

It combines carrier stored trench-gate and field-stop (FS) structures.

The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses.

Features

  • Device current is rated at 75 A.
  • Low conduction and switching losses.
  • Stable and tight parameters for easy parallel operation.
  • Maximum junction temperature 175 °C.
  • Fully rated and fast reverse recovery diode.
  • HV-H3TRB qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TO-247-3L NGW75T65H3DFP 650 V, 75 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 17 January 2025 Product data sheet 1. General description The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. 2. Features • Device current is rated at 75 A • Low conduction and switching losses • Stable and tight parameters for easy parallel operation • Maximum junction temperature 175 °C • Fully rated and fast reverse recovery diode • HV-H3TRB qualified 3.
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