Datasheet4U Logo Datasheet4U.com

NGW75T65H3DFP 650V 75A trench field-stop IGBT

NGW75T65H3DFP Description

TO-247-3L NGW75T65H3DFP 650 V, 75 A trench field-stop IGBT with full rated silicon diode Rev.1 * 17 January 2025 Product data sheet 1.G.
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

NGW75T65H3DFP Features

* Device current is rated at 75 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction temperature 175 °C
* Fully rated and fast reverse recovery diode

📥 Download Datasheet

Preview of NGW75T65H3DFP PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

650V 75A trench field-stop IGBT nexperia
nexperia NGW75T65H3DFP-like datasheet