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NGW75T65H3DF - 75A high speed trench field-stop IGBT

Datasheet Summary

Description

The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

It combines carrier stored trench-gate and field-stop (FS) structures.

The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses.

Features

  • Collector current (IC) rated at 75 A.
  • Low conduction and switching losses.
  • Stable and tight parameters for easy parallel operation.
  • Maximum junction temperature of 175 °C.
  • Fully rated as a soft fast reverse recovery diode.
  • RoHS compliant, lead-free plating 3.

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Datasheet Details

Part number NGW75T65H3DF
Manufacturer nexperia
File Size 256.35 KB
Description 75A high speed trench field-stop IGBT
Datasheet download datasheet NGW75T65H3DF Datasheet
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TO-247-3L NGW75T65H3DF 650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode Rev. 1 — 28 June 2024 Product data sheet 1. General Description The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. 2.
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