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NGW30T65M3DFP - 650V 30A trench field-stop IGBT

Datasheet Summary

Description

The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology.

It combines carrier stored trench-gate and field-stop (FS) structures.

Features

  • Device current is rated at 30 A.
  • Low conduction and switching losses.
  • Stable and tight parameters for easy parallel operation.
  • Maximum junction temperature 175 °C.
  • Fully rated and fast reverse recovery diode.
  • 5 μs short circuit withstand time.
  • HV-H3TRB qualified 3.

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Datasheet Details

Part number NGW30T65M3DFP
Manufacturer nexperia
File Size 363.86 KB
Description 650V 30A trench field-stop IGBT
Datasheet download datasheet NGW30T65M3DFP Datasheet
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TO-247-3 NGW30T65M3DFP 650 V, 30 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 17 January 2025 Product data sheet 1. General description The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, highfrequency industrial power inverter applications and servo motor drive applications. 2.
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