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NGW40T65M3DFP 650V 40A trench field-stop IGBT

NGW40T65M3DFP Description

TO-247-3L NGW40T65M3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev.1.1 * 28 February 2025 Product data sheet 1.
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

NGW40T65M3DFP Features

* Device current is rated at 40 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction temperature 175 °C
* Fully rated and soft fast reverse recovery diode
* 5 μs short circuit withstand t

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