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NGW50T65H3DFP 50A high speed trench field-stop IGBT

NGW50T65H3DFP Description

TO-247-3 NGW50T65H3DFP 650 V, 50 A high speed trench field-stop IGBT with full rated silicon diode Rev.1 * 28 June 2024 Product data she.
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology.

NGW50T65H3DFP Features

* Collector current (IC) rated at 50 A
* Low conduction and switching losses
* Stable and tight parameters for easy parellel operation
* Maximum junction temperature of 175 °C
* Fully rated as a soft fast reverse recovery diode
* RoHS compliant, lead-f

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