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NGW50T65M3DFP 650V 50A trench field-stop IGBT

NGW50T65M3DFP Description

TO-247-3 NGW50T65M3DFP 650 V, 50 A trench field-stop IGBT with full rated silicon diode Rev.1.1 * 7 March 2025 Product data sheet 1.Gen.
The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

NGW50T65M3DFP Features

* Device current is rated at 50 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction temperature 175 °C
* Fully rated and fast reverse recovery diode
* 5 μs short circuit withstand time

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