NGW30T65M3DFP 650V 30A trench field-stop IGBT

nexperia

Description

TO-247-3 NGW30T65M3DFP 650 V, 30 A trench field-stop IGBT with full rated silicon diode Rev.1 * 17 January 2025 Product data sheet 1.Ge.
The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology.

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Datasheet Specifications

Part number: NGW30T65M3DFP
Manufacturer: nexperia ↗
File Size: 363.86 KB
Datasheet: NGW30T65M3DFP-nexperia.pdf
Description: 650V 30A trench field-stop IGBT

Features

* Device current is rated at 30 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction temperature 175 °C
* Fully rated and fast reverse recovery diode
* 5 μs short circuit withstand time

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