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BAS21GW High-voltage switching diode

BAS21GW Description

BAS21GW High-voltage switching diode 15 June 2017 Product data sheet 1.General .
High-voltage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. High s.

BAS21GW Features

* High switching speed: trr ≤ 50 ns
* Low leakage current: IR ≤ 100 nA
* High reverse voltage VR ≤ 200 V
* Low capacitance: Cd ≤ 2 pF
* Small SMD plastic package

BAS21GW Applications

* High-speed switching
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter IF forward current VR reverse voltage VF forward voltage IR reverse current trr reverse recovery time Conditions Tj = 25 °C IF = 200 mA; tp ≤ 300 µs; δ ≤

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