BAS116QA-Q Datasheet - nexperia

BAS116QA-Q, Low-leakage diode

BAS116QA-Q Low-leakage diode 7 March 2025 Product data sheet 1.
General description Low-leakage current switching diode encapsulated in a leadless u

Features

* High switching speed: trr = 0.8 µs
* Low leakage current: IR = 3 pA
* Repetitive peak reverse voltage VRRM ≤ 85 V
* Low capacitance Cd = 2 pF
* Ultra small SMD plastic package
* Low package height of 0.37 mm
* Suitable for Automatic Optical I

Applications

* 3. Applications
* Low-leakage current applications
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage IF forward current Tamb = 25 °C [1] VR reverse voltage Tj =

BAS116QA-Q-nexperia.pdf