BAS116QA Datasheet - nexperia

BAS116QA, Low-leakage diode

BAS116QA Low-leakage diode 3 May 2016 Product data sheet 1.
General description Single low-leakage current switching diode encapsulated in a leadles

Features

* High switching speed: trr = 0.8 µs
* Low leakage current: IR = 3 pA
* Repetitive peak reverse voltage VRRM ≤ 85 V
* Low capacitance Cd = 2 pF
* Ultra small SMD plastic package
* Low package height of 0.37 mm
* Suitable for Automatic Optical I

Applications

* Low-leakage current applications
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage IF forward current Tamb = 25 °C [1] VR reverse voltage Tj = 25 °C VF forwar

BAS116QA-nexperia.pdf