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BAS116GW Low leakage switching diode

BAS116GW Description

BAS116GW Low leakage switching diode 5 April 2018 Product data sheet 1.General .
Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. High sw.

BAS116GW Features

* High switching speed: trr = 0.8 µs
* Low leakage current: IR = 3 pA
* Repetitive peak reverse voltage VRRM ≤ 85 V
* Low capacitance: Cd = 2 pF
* Small SMD plastic package

BAS116GW Applications

* Low-leakage current applications
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage IF forward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VR reverse voltage Tj =

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