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BAS116L-Q Datasheet - nexperia

BAS116L-Q, Low-leakage diode

Switching time typical: trr = 0.8 µs, Low leakage current typical: IR = 3 pA, Repetitive peak reverse voltage: VRRM ≤ 85 V...

BAS116L-Q-nexperia.pdf

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Datasheet Details

Part number:

BAS116L-Q

Manufacturer:

nexperia ↗

File Size:

205.69 KB

Description:

Low-leakage diode.

BAS116L-Q Description

Features

* Switching time typical: trr = 0.8 µs

* Low leakage current typical: IR = 3 pA

* Repetitive peak reverse voltage: VRRM ≤ 85 V

* Low capacitance typical: Cd = 2 pF

* Leadless ultra small SMD plastic package

* Low package height of 0.48 mm

* Qua

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