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BAS116L-Q Low-leakage diode

BAS116L-Q Description

BAS116L-Q Low-leakage diode 18 February 2025 Product data sheet 1.General .
Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.

BAS116L-Q Features

* Switching time typical: trr = 0.8 µs
* Low leakage current typical: IR = 3 pA
* Repetitive peak reverse voltage: VRRM ≤ 85 V
* Low capacitance typical: Cd = 2 pF
* Leadless ultra small SMD plastic package
* Low package height of 0.48 mm
* Qua

BAS116L-Q Applications

* 3. Applications
* Low-leakage current applications
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VR reverse voltage Tj = 25 °C VRRM repetitive peak reverse voltage IF forward current Tamb = 25 °C [1] VF

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