NP6667SR - N And P-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	NP6667SR
Manufacturer	natLinear
File Size	511.82 KB
Description	N And P-Channel Enhancement Mode MOSFET
Datasheet	NP6667SR Datasheet
Additional preview pages of the NP6667SR datasheet.

Product details

Description

Schematic diagram The NP6667SR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.General

Features

N-channel： VDS =30V，ID =10A RDS(ON)=16mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-15A RDS(ON)=17.5mΩ (typical) @ VGS=-10V RDS(ON)=24mΩ (typical) @ VGS=-4.5V.
Excellent gate charge x RDS(ON) product(FOM).
Very low on-resistance RDS(ON).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested HF Pb.

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Published: Jul 23, 2024 |