NP6608QR - 20V N And P-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	NP6608QR
Manufacturer	natLinear
File Size	866.04 KB
Description	20V N And P-Channel Enhancement Mode MOSFET
Datasheet	NP6608QR Datasheet
Additional preview pages of the NP6608QR datasheet.

Product details

Description

Schematic diagram The NP6608QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.General

Features

N-channel： VDS =20V，ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-10A RDS(ON)=15.3mΩ (typical) @ VGS=-4.5V RDS(ON)=19.7mΩ (typical) @ VGS=-2.5V.
Excellent gate charge x RDS(ON) product(FOM).
Very low on-resistance RDS(ON).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Marking and pin assignment PDFN3×3-8L （Top View）.

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Published: Jul 23, 2024 |