NP6008BSR Datasheet (natlinear) - 60V N-Channel Enhancement Mode MOSFET

NP6008BSR, 60V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for hi

NP6008BSR Features

* Marking and pin assignment

* VDS =60V，ID =8A RDS(ON)(Typ.)=32mΩ @VGS=10V RDS(ON)(Typ.)=39mΩ @VGS=4.5V

* Excellent gate charge RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* 100% UIS tested Application HF Pb

* Synchronus Rectific