NP6008BSR - 60V N-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	NP6008BSR
Manufacturer	natLinear
File Size	360.89 KB
Description	60V N-Channel Enhancement Mode MOSFET
Datasheet	NP6008BSR Datasheet
Additional preview pages of the NP6008BSR datasheet.

Product details

Description

Schematic diagram The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.D G S General

Features

Marking and pin assignment.
VDS =60V，ID =8A RDS(ON)(Typ. )=32mΩ @VGS=10V RDS(ON)(Typ. )=39mΩ @VGS=4.5V.
Excellent gate charge RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
100% UIS tested.

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Published: Jul 23, 2024 |