NP60S10D6 - 100V N-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	NP60S10D6
Manufacturer	natLinear
File Size	656.52 KB
Description	100V N-Channel Enhancement Mode MOSFET
Datasheet	NP60S10D6 Datasheet
Additional preview pages of the NP60S10D6 datasheet.

Product details

Description

Schematic diagram The NP60S10D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.General

Features

VDS =100V，ID =60A RDS(ON)(Typ. )=4.6mΩ @VGS=10V RDS(ON)(Typ. )=6.5mΩ @VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
100% UIS tested Marking and pin assignment.

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Published: Jul 23, 2024 |