NP6666D6 - N And P-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	NP6666D6
Manufacturer	natLinear
File Size	829.37 KB
Description	N And P-Channel Enhancement Mode MOSFET
Datasheet	NP6666D6 Datasheet
Additional preview pages of the NP6666D6 datasheet.

Product details

Description

Schematic diagram The NP6666D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.General

Features

N-channel： VDS =30V，ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-30A RDS(ON)=14mΩ (typical) @ VGS=-10V RDS(ON)=19mΩ (typical) @ VGS=-4.5V.
Excellent gate charge x RDS(ON) product(FOM).
Very low on-resistance RDS(ON).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Marking and pin assignment PDFN5×6-8L-B D1 D1 D2 D2 D2 D2 D1 D1 NP6666 XXXXX YYYYY S1 G1 S2 G2 Top View G2 S2 G1 S1 Bottom.

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Published: Jul 23, 2024 |