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NP3P06MR - 60V P-Channel Enhancement Mode MOSFET

Description

The NP3P06MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in load switch and battery protection applications.

Features

  • VDS =-60V，ID =-3A RDS(ON)(Typ)=123.5mΩ @VGS=-10V RDS(ON)(Typ)=160mΩ @VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet Details

Part number NP3P06MR
Manufacturer natlinear
File Size 576.58 KB
Description 60V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP3P06MR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP3P06MR 60V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3P06MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features  VDS =-60V，ID =-3A RDS(ON)(Typ)=123.5mΩ @VGS=-10V RDS(ON)(Typ)=160mΩ @VGS=-4.
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