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NP3095G - 30V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V，ID =95A RDS(ON)(Typ. )=4.3mΩ @VGS=10V RDS(ON)(Typ. )=6.9mΩ @VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet preview – NP3095G

Datasheet Details

Part number NP3095G
Manufacturer natLinear
File Size 632.80 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP3095G Datasheet
Additional preview pages of the NP3095G datasheet.

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Full PDF Text Transcription

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30V N-Channel Enhancement Mode MOSFET NP3095G Description Schematic diagram The NP3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features  VDS =30V，ID =95A RDS(ON)(Typ.)=4.3mΩ @VGS=10V RDS(ON)(Typ.)=6.9mΩ @VGS=4.
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