YJL2312A N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJL2312A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=4.5V) * RDS.
Trench Power LV MOSFET technology. High Power and current handing capability Applications. PWM application. Load switch. A.

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Datasheet Specifications

Part number: YJL2312A
Manufacturer: Yangzhou Yangjie
File Size: 592.80 KB
Datasheet: YJL2312A-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* PWM application
* Load switch
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current TA=70℃ @ Steady State ID Pulsed Drain Current A IDM ±10 V 6.

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YJL2312A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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