Datasheet Details
- Part number
- YJL2312A
- Manufacturer
- Yangzhou Yangjie
- File Size
- 592.80 KB
- Datasheet
- YJL2312A-YangzhouYangjie.pdf
- Description
- N-Channel Enhancement Mode Field Effect Transistor
YJL2312A Description
YJL2312A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=4.5V) * RDS.
Trench Power LV MOSFET technology.
High Power and current handing capability
Applications.
PWM application.
Load switch.
A.
YJL2312A Applications
* PWM application
* Load switch
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
20
V
Gate-source Voltage
VGS
TA=25℃ @ Steady State
Drain Current
TA=70℃ @ Steady State
ID
Pulsed Drain Current A
IDM
±10
V
6.
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