YJL03N06A N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJL03N06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Trench Power MV MOSFET technology. Excellent package for heat dissipation. High density cell design for low RDS(ON) Applications.

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Datasheet Specifications

Part number: YJL03N06A
Manufacturer: Yangzhou Yangjie
File Size: 466.53 KB
Datasheet: YJL03N06A-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* DC-DC Converters
* Power management functions
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ VGS ±20 V 3 ID A 2.4 IDM 12 A T

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YJL03N06A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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