Datasheet Details
- Part number
- YJL03N06A
- Manufacturer
- Yangzhou Yangjie
- File Size
- 466.53 KB
- Datasheet
- YJL03N06A-YangzhouYangjie.pdf
- Description
- N-Channel Enhancement Mode Field Effect Transistor
YJL03N06A Description
YJL03N06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Trench Power MV MOSFET technology.
Excellent package for heat dissipation.
High density cell design for low RDS(ON)
Applications.
YJL03N06A Applications
* DC-DC Converters
* Power management functions
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
60
V
Gate-source Voltage Drain Current Pulsed Drain Current A
TA=25℃ TA=70℃
VGS
±20
V
3
ID
A
2.4
IDM
12
A
T
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