Datasheet Details
- Part number
- YJL02N10A
- Manufacturer
- Yangzhou Yangjie
- File Size
- 437.78 KB
- Datasheet
- YJL02N10A-YangzhouYangjie.pdf
- Description
- N-Channel Enhancement Mode Field Effect Transistor
YJL02N10A Description
YJL02N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Trench Power MV MOSFET technology.
Excellent package for heat dissipation.
High density cell design for low RDS(ON).
MSL LEVEL1.
YJL02N10A Applications
* DC-DC Converters
* Power management functions
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A
TA=25℃ TA=70℃
VDS
100
V
VGS
±20
V
2
ID
A
1.6
IDM
8
A
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