Datasheet Details
- Part number
- YJL2305B
- Manufacturer
- Yangzhou Yangjie
- File Size
- 642.52 KB
- Datasheet
- YJL2305B-YangzhouYangjie.pdf
- Description
- P-Channel Enhancement Mode Field Effect Transistor
YJL2305B Description
YJL2305B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=-4.5V) * RD.
Trench Power LV MOSFET technology.
High Density Cell Design for Low RDS(ON).
High Speed switching
Applications.
Battery protecti.
YJL2305B Applications
* Battery protection
* Load switch
* Power management
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Maximum
Unit
Drain-source Voltage
Gate-source Voltage Drain Current Pulsed Drain Current A
TA=25℃ Steady State TA=70℃ Steady State
Total Power Dis
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