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XP65SA190DR - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

XP65SA190DR Description

XP65SA190DR Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH.
XP65SA190D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

XP65SA190DR Applications

* The TO-262 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3,4 G D S 650V 0.19Ω 20A TO-262(R) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating

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Datasheet Details

Part number
XP65SA190DR
Manufacturer
YAGEO
File Size
190.04 KB
Datasheet
XP65SA190DR-YAGEO.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO
YAGEO XP65SA190DR-like datasheet