Datasheet Details
| Part number | XP10C150MT |
|---|---|
| Manufacturer | YAGEO |
| File Size | 732.09 KB |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 XP10C150MT-YAGEO.pdf
|
| Part number | XP10C150MT |
|---|---|
| Manufacturer | YAGEO |
| File Size | 732.09 KB |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
XP10C150MT-YAGEO.pdf
|
S1 G1 S2 G2 XP10C150 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.It provides the designer with an extreme efficient device for use in a wide range of power applications.BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 100V 150mΩ 3.2A -100V 160mΩ -3.2A D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve
📁 XP10C150MT Similar Datasheet