CMPA901A035F Datasheet (Wolfspeed)

CMPA901A035F, Power Amplifier

The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate.

The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth.

The GaN HEMT MMIC is housed in a the

CMPA901A035F Features

* 9.0 - 11.0 GHz Operation

* Typical Output Power 40 W

* Typical Power Gain 23 dB

* Typical PAE 35%

* Operation up to 28 V Applications

* Military Radar

* Marine Radar

* Weather Radar

* Medical Applications Rev 0.3

* A