CMPA1D1E030D Datasheet (Wolfspeed)

CMPA1D1E030D, Power Amplifier

Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process.

GaN-on-SiC has superior properties compared to silicon, gallium arsenide

CMPA1D1E030D Features

* 27 dB Small Signal Gain

* 30 W Typical PSAT

* Operation up to 40 V

* High Breakdown Voltage

* High Temperature Operation Applications

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