CMPA0060002F Datasheet (CREE) - GaN MMIC Power Amplifier

CMPA0060002F, GaN MMIC Power Amplifier

CONNECTOR, SMA, AMP1052901-1 PCB, TACONIC, RF-35-0100-CH/CH CMPA0060002F Qty 2 1 1 Notes 1 The CMPA0060002F is connected to the PCB with 2.0 mil Au bond wires.

2 An external bias T is required.

All

CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.

This MMIC employ

CMPA0060002F Features

* 17 dB Small Signal Gain

* 3 W Typical PSAT

* Operation up to 28 V

* High Breakdown Voltage

* High Temperature Operation

* 0.5” x 0.5” total product size Applications

* Ultra Broadband Amplifiers

* Fiber Drivers

* Tes