CMPA601C025F Datasheet (Wolfspeed)

CMPA601C025F, Power Amplifier

The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process.

The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneou

CMPA601C025F Features

* 34 dB Small Signal Gain

* 40 W Typical PSAT Operation up to 28 V

* High Breakdown Voltage

* High Temperature Operation

* Size 0.172 x 0.239 x 0.004 inches Applications

* Jamming Amplifiers

* Test Equipment Amplifiers