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WPM4803 - MOSFET

Description

The WPM4803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • z-30V/-5A,RDS(ON)= 36mȍ@VGS=- 10V z-30V/-4A,RDS(ON)= 53m\ȍ@VGS=- 4.5V zSuper high density cell design for extremely low RDS (ON) zExceptional on-resistance and maximum DC current capability zSOP.
  • 8P package design.

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Datasheet Details

Part number WPM4803
Manufacturer WillSEMI
File Size 756.46 KB
Description MOSFET
Datasheet download datasheet WPM4803 Datasheet

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Full PDF Text Transcription

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WPM4803 P-Channel Enhancement Mode MOSFET Description The WPM4803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . Features z-30V/-5A,RDS(ON)= 36mȍ@VGS=- 10V z-30V/-4A,RDS(ON)= 53m\ȍ@VGS=- 4.
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