WNM12N65 Datasheet (Will Semiconductor)

WNM12N65, N-Channel MOSFET

The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other

WNM12N65 Features

* 650V@TJ=25°C

* Typ.RDS(on)=0.57Ω

* Low gate charge

* 100% avalanche tested

* 100% Rg tested D GDS TOT-O22- 0 12N65 12N65F G S GD S TO-220F WNM12N65 =Devices code Y Y =Year WW =Week WNM12N65 F =Devices code Y Y =Year WW =Week Order Information Device Package WNM12N