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WNM07N60F - N-Channel MOSFET

Download the WNM07N60F datasheet PDF. This datasheet also covers the WNM07N60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge.

Features

  • 600V@TJ=25°C.
  • Typ. RDS(on)=1.0 Ω.
  • Low gate charge.
  • 100% avalanche tested.
  • 100% Rg tested D GDS TOT-O22- 0 G S GD S TO-220F WNM07N60 =Devices code Y Y =Year WW =Week WNM07N60F =Devices code Y Y =Year WW =Week Order Information Device Package WNM07N60_3/T TO-220 WNM07N60F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25oC unless otherwise noted Parameter Symbol WNM07N60 WNM07N60F Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (WNM07N60-WillSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number WNM07N60F
Manufacturer Will Semiconductor
File Size 1.70 MB
Description N-Channel MOSFET
Datasheet download datasheet WNM07N60F Datasheet

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Full PDF Text Transcription

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WNM07N60/WNM07N60F 600V N-Channel MOSFET Description The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications. WNM07N60/WNM07N60F Features  600V@TJ=25°C  Typ.RDS(on)=1.
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