WNM2023 - N-Channel MOSFET

TY Semiconductor

WNM2023 Datasheet Preview — Preview of WNM2023 PDF

Datasheet Details

Part number	WNM2023
Manufacturer	TY Semiconductor
File Size	228.13 KB
Description	N-Channel MOSFET
Datasheet	WNM2023-TYSemiconductor.pdf

WNM2023 Product details

Description

D The WNM2023 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench (ON) 3 technology and design to provide excellent RDS with low gate charge.This device is suitable for use in DC-DC conversion, power switch and charging circuit.Standard Product WNM2023 is Pb-free.1 G 2 S Pin configuration (Top view)

Features

z z z z z Trench Technology Supper high density cell design 1 3 W04.
2 Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W04 = Device Code.
= Month (A~Z).

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Published: Jun 26, 2014 |