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VSMB10940 High Speed Infrared Emitting Diode

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Description

www.vishay.com VSMB10940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW .
VSMB10940 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, mol.

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Datasheet Specifications

Part number
VSMB10940
Manufacturer
Vishay ↗
File Size
293.46 KB
Datasheet
VSMB10940-Vishay.pdf
Description
High Speed Infrared Emitting Diode

Features

* Package type: Surface mount
* Package form: Side view
* Dimensions (L x W x H in mm): 3 x 2 x 1
* Peak wavelength:
* p = 940 nm
* High reliability
* High radiant power
* High radiant intensity
* High speed
* Angle of half s

Applications

* IR touch panel
* High power emitter for low space applications
* High performance transmissive or reflectiv

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