Datasheet4U Logo Datasheet4U.com

VSMB294008RG - High Speed Infrared Emitting Diodes

VSMB294008RG Description

www.vishay.com VSMB294008RG, VSMB294008G Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW VSMB294008RG VSMB294008G .
VSMB294008 series are infrared, 940 nm emitting diodes in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in.

VSMB294008RG Features

* Package type: surface mount
* Package form: GW, RGW
* Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
* Peak wavelength:
* p = 940 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity:  = ± 7

VSMB294008RG Applications

* Data transmission
* Miniature light barrier
* Photointerrupters
* Optical switch
* Control and drive circuits

📥 Download Datasheet

Preview of VSMB294008RG PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VSMB294008RG
Manufacturer
Vishay ↗
File Size
154.12 KB
Datasheet
VSMB294008RG-Vishay.pdf
Description
High Speed Infrared Emitting Diodes

📁 Related Datasheet

  • VSM002NE4MS-G - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSM003N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSM003N06HS-G - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSM005NE8HS-G - 85V/124A N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSM007N07MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSM007P06MS - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSM008N07HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSM012N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)

📌 All Tags

High Speed Infrared Emitting Diodes Vishay
Vishay VSMB294008RG-like datasheet