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VSMB294008G, VSMB294008RG - High Speed Infrared Emitting Diodes

VSMB294008G Description

www.vishay.com VSMB294008RG, VSMB294008G Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW VSMB294008RG VSMB294008G .
VSMB294008 series are infrared, 940 nm emitting diodes in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in.

VSMB294008G Features

* Package type: surface mount
* Package form: GW, RGW
* Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
* Peak wavelength:
* p = 940 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity:  = ± 7

VSMB294008G Applications

* Data transmission
* Miniature light barrier
* Photointerrupters
* Optical switch
* Control and drive circuits

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: VSMB294008G, VSMB294008RG. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
VSMB294008G, VSMB294008RG
Manufacturer
Vishay ↗
File Size
154.12 KB
Datasheet
VSMB294008RG-Vishay.pdf
Description
High Speed Infrared Emitting Diodes
Note
This datasheet PDF includes multiple part numbers: VSMB294008G, VSMB294008RG.
Please refer to the document for exact specifications by model.

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High Speed Infrared Emitting Diodes Vishay
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