VI40M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

New Product V40M120C, VI40M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.46 V at IF = 5 A .

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Datasheet Specifications

Part number: VI40M120C
Manufacturer: Vishay ↗
File Size: 783.78 KB
Datasheet: VI40M120C_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS TO-220AB ®
* Trench MOS Schottky technology TO-262AA
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 2 K MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 120 V 250 A 0.64 V 150 °C Case: TO-220AB and TO-262AA Molding

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VI40M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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