VI40100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

V40100C-E3, VF40100C, VB40100C-E3, VI40100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier .

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Datasheet Specifications

Part number: VI40100C-E3
Manufacturer: Vishay ↗
File Size: 1.09 MB
Datasheet: VI40100C-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VB40100C PIN 1 K PIN 2 HEATSINK VI40100C PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Pack

VI40100C-E3 Distributors

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VI40100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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