Datasheet Details
- Part number
- VI40100G-E3
- Manufacturer
- Vishay ↗
- File Size
- 145.60 KB
- Datasheet
- VI40100G-E3-Vishay.pdf
- Description
- Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI40100G-E3 Description
V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.
VI40100G-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
VI40100G-E3 Applications
* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1
VB40100G
PIN 1
K
PIN 2
HEATSINK
VI40100G
PIN 1
3 2 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Pack
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