VI40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V40100C, VI40100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = .

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Datasheet Specifications

Part number: VI40100C
Manufacturer: Vishay ↗
File Size: 136.87 KB
Datasheet: VI40100C-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions o

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 20 A 100 V 250 A VF at IF = 20 A 0.61 V TJ max. Package 150 °C TO-220AB, TO-262AA Diode variation Common cath

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VI40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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