V60170PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V60170PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A TMB.

📥 Download Datasheet

V60170PW Datasheet Preview — Preview of V60170PW PDF

Datasheet Specifications

Part number: V60170PW
Manufacturer: Vishay ↗
File Size: 86.73 KB
Datasheet: V60170PW-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-3PW PIN

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 170 V 260 A 0.65 V 175 °C MECHANICAL DATA Case: TO-3PW Molding compound meets UL 94 V

V60170PW Distributors

📁 Related Datasheet

V60100C V600 V600-HA V600-HAM81 V600-HAM91 V600-HAR81

📌 All Tags

V60170PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay V60170PW-like datasheet