V60100C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V60100C-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TM.

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Datasheet Specifications

Part number: V60100C-M3
Manufacturer: Vishay ↗
File Size: 120.19 KB
Datasheet: V60100C-M3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPICAL APPLI

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 100 V 320 A 0.66 V 150 °C TO-220AB Diode variation Common cathode

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V60100C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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