Datasheet4U Logo Datasheet4U.com

V60120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number V60120C
Manufacturer Vishay
File Size 150.11 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V60120C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
V60100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix
V600 RFID System Applications Omron
V600-HA Intelligent Flag I/II Omron
V600-HA Intelligent Flag I Omron
V600-HAM81 Intelligent Flag I/II Omron

Other Datasheets by Vishay

Part Number Description
V60100C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
V60100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60170G-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60170PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A TO-220AB TMBS ® D2PAK (TO-263AB) K 3 2 1 V60120C PIN 1 PIN 2 PIN 3 CASE 2 1 VB60120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 120 V 300 A 0.
Published: |