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V60100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.456 V at IF = 10 A
FEATURES
TMBS®
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation
3 2 1
• Low thermal resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
TO-247AD (TO-3P)
PIN 1 PIN 3 PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 100 V 350 A 0.
V60100P Datasheet
