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V60170G-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
TO-220AB
V60170G
3 2 1
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
2 x 30 A 170 V 210 A 0.72 V 175 °C
TO-220AB
Diode variation
Dual common cathode
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
V60170G-M3 Datasheet
