V60100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product V60100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V.

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Datasheet Specifications

Part number: V60100P
Manufacturer: Vishay ↗
File Size: 165.51 KB
Datasheet: V60100P_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* TMBS®
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 3 2 1
* Low thermal resistance
* Solder dip 260 °C, 40 s
* Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICAT

Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 100 V 350 A 0.657 V 150 °C MECHAN

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V60100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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