V60100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A TMB.

📥 Download Datasheet

V60100PW Datasheet Preview — Preview of V60100PW PDF

Datasheet Specifications

Part number: V60100PW
Manufacturer: Vishay ↗
File Size: 87.42 KB
Datasheet: V60100PW_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-3PW PIN

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 350 A EAS at L = 180 mH VF at IF = 30 A 700 mJ 0.66 V TJ max. 150 °C Package TO-3PW

V60100PW Distributors

📁 Related Datasheet

V60100C V600 V600-HA V600-HAM81 V600-HAM91 V600-HAR81

📌 All Tags

V60100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay V60100PW-like datasheet